Package Information
www.vishay.com
TO-247AC (High Voltage)
Vishay Siliconix
4
A
A
B
3 R/2
E
E/2
S
A2
A
7 ?P
? k M D B M
(Datum B)
?P1
Q
D2
2xR
(2)
D
4
D1
4
1
2
3
D
Thermal pad
4
5 L1
C
L
4
See view B
A
E1
0.01 M D B M
2 x b2
3xb
0.10 M C A M
b4
2x e
A1
C
Planting
V iew   A - A
(b1, b3, b5)
Base metal
Lead Assignments
1. Gate
D DE
E
2. Drain
3. Source
4. Drain
C
C
(c)
c1
(b, b2, b4)
(4)
View B
Section C - C, D - D, E - E
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM. MIN. MAX.
A 4.58 5.31
A1 2.21 2.59
A2 1.17 2.49
b 0.99 1.40
b1 0.99 1.35
b2 1.53 2.39
b3 1.65 2.37
b4 2.42 3.43
b5 2.59 3.38
c 0.38 0.86
c1 0.38 0.76
D 19.71 20.82
D1 13.08 -
MIN. MAX.
0.180 0.209
0.087 0.102
0.046 0.098
0.039 0.055
0.039 0.053
0.060 0.094
0.065 0.093
0.095 0.135
0.102 0.133
0.015 0.034
0.015 0.030
0.776 0.820
0.515 -
DIM.
D2
E
E1
e
?k
L
L1
N
?P
? P1
Q
R
S
MIN. MAX.
0.51 1.30
15.29 15.87
13.72 -
5.46 BSC
0.254
14.20 16.25
3.71 4.29
7.62 BSC
3.51 3.66
- 7.39
5.31 5.69
4.52 5.49
5.51 BSC
MIN. MAX.
0.020 0.051
0.602 0.625
0.540 -
0.215 BSC
0.010
0.559 0.640
0.146 0.169
0.300 BSC
0.138 0.144
- 0.291
0.209 0.224
0.178 0.216
0.217 BSC
ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. ? P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
8. Xian and Mingxin actually photo.
Revision: 01-Jul-13
1
Document Number: 91360
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SIHP12N60E-E3 MOSFET N-CH 600V 12A TO220AB
SIHP30N60E-E3 MOSFET N-CH 600V 29A TO220AB
SIHP5N50D-E3 MOSFET N-CH 500V 5.3A TO220AB
SIHP6N40D-E3 MOSFET N-CH 400V 6A TO-220AB
SIHP7N60E-GE3 MOSFET N CH 600V 7A TO-220AB
SIHU3N50D-E3 MOSFET N-CH 500V 3A TO251 IPAK
SIHU5N50D-E3 MOSFET N-CH 500V 5.3A TO251 IPAK
SIJ400DP-T1-GE3 MOSFET N-CH 30V PPAK SO-8L
相关代理商/技术参数
SIHG24N65E-GE3 功能描述:MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIHG24N65E-GE3 制造商:Vishay Siliconix 功能描述:MOSFET N CH 650V 24A TO-247AC-3 制造商:Vishay Siliconix 功能描述:MOSFET, N CH, 650V, 24A, TO-247AC-3
SIHG25N40D 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:D Series Power MOSFET
SIHG25N40D-E3 功能描述:MOSFET 450V 25A 278W .17ohms @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SiHG25N40D-GE3 功能描述:MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIHG30N60E 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:E Series Power MOSFET
SIHG30N60E_13 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:E Series Power MOSFET
SiHG30N60E-E3 功能描述:MOSFET N-Channel 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube